DocumentCode :
2304402
Title :
Effect of extrusion process on the thermoelectric properties of hot-extruded n-type Bi2Te2.85Se0.15 compounds
Author :
Seo, J.H. ; Lee, D.M. ; Park, K. ; Lee, C.H.
Author_Institution :
Dept. of Metall. Eng., Inha Univ., Inchon, South Korea
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
81
Lastpage :
84
Abstract :
The n-type Bi2Te2.85Se0.15 compounds were fabricated by the hot extrusion under in the temperature range of 300 to 440°C under an extrusion ratio of 20:1. The microstructure and thermoelectric properties of the compounds were studied. It was found that the compounds was highly dense. The density was increased with increasing temperature. Also, equiaxed fine grains (~1.0 μm) were formed because dynamic recrystallization occurred during the extrusion. The hot extrusion gave rise to a slightly preferred orientation of grains. The small grain size and preferred orientation of grains and the high density contributed to an improvement in the thermoelectric properties. The highest figure of merit (2.62×10-3/K) was obtained at 440°C. In addition, the Sbl3 dopants significantly increased the figure of merit. The values of the figure of merit for 0.05 wt% Sbl3-doped Bi 2Te0.85Se0.15 compounds hot extruded at 440°C was 3.05×10-3/K
Keywords :
antimony compounds; bismuth compounds; density; extrusion; grain size; powder technology; recrystallisation; semiconductor materials; texture; thermoelectricity; 300 to 440 degC; Bi2Te2.85Se0.15-SbI3; density; dynamic recrystallization; equiaxed fine grains; figure of merit; grain size; hot extrusion; hot-extruded n-type compounds; microstructure; preferred orientation; thermoelectric properties; Bismuth; Conducting materials; Crystal microstructure; Grain boundaries; Powders; Tellurium; Temperature distribution; Thermal conductivity; Thermoelectricity; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.666979
Filename :
666979
Link To Document :
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