Title :
Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiNTa2O5Ta RRAM device
Author :
Goux, L. ; Fantini, Andrea ; Redolfi, A. ; Chen, C.Y. ; Shi, F.F. ; Degraeve, Robin ; Chen, Y.Y. ; Witters, T. ; Groeseneken, Guido ; Jurczak, Malgorzata
Author_Institution :
imec, Leuven, Belgium
Abstract :
We engineer a scalable and CMOS-friendly RRAM stack using down to 3nm ALD-based Ta2O5. The 20nm-sized TiNTa2O5Ta device operated at 50μA exhibits ultra-fast write (~5ns) at moderate voltage (<;2V) with >109 write endurance. We also demonstrate excellent disturb and retention characteristics, which we relate to the appropriate tuning of the oxygen chemical-potential profile along the filament by means of the Ta scavenger material and thickness.
Keywords :
CMOS memory circuits; random-access storage; tantalum compounds; titanium compounds; TiN-Ta2O5-Ta; scalable low current operated RRAM device; scavenger electrode; size 20 nm; switching control; Electrodes; Hafnium compounds; Materials; Resistance; Switches; Tuning; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894401
