Title :
Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants
Author :
Chen, Y.Y. ; Roelofs, R. ; Redolfi, A. ; Degraeve, Robin ; Crotti, D. ; Fantini, Andrea ; Clima, S. ; Govoreanu, B. ; Komura, M. ; Goux, L. ; Zhang, Leiqi ; Belmonte, A. ; Xie, Qian ; Maes, Jochen ; Pourtois, G. ; Jurczak, Malgorzata
Author_Institution :
imec, Leuven, Belgium
Abstract :
We have demonstrated that by material engineering using different spices to dope HfO2, RRAM cell switching and endurance / retention reliability characteristics can be modulated. The changes in SET/RESET voltages, endurance optimal programming window and retention result mainly from the oxygen scavenging efficiency of Hf cap in presence of different dopants in HfO2. This impacts directly the formation of OEL that controls the RRAM switching characteristics and retention. By utilizing different dopant materials, the operation range of the HfO2 based RRAM can be tailored to be compatible with different selectors and to be adopted for broader applications.
Keywords :
aluminium; hafnium; hafnium compounds; random-access storage; semiconductor device reliability; semiconductor doping; silicon; titanium; Hf cap; HfO2-Hf:Ti,Al,Si; OEL formation; RRAM cell switching; SET-RESET voltages; dopant materials; endurance-retention reliability; material engineering; optimal programming window; oxygen scavenging efficiency; tailoring switching; Doping; Hafnium oxide; Oxygen; Silicon; Switches;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894403
