Title :
A 1TnR array architecture using a one-dimensional selection device
Author :
Chiyui Ahn ; Zizhen Jiang ; Chi-Shuen Lee ; Hong-Yu Chen ; Jiale Liang ; Liyanage, L.S. ; Wong, H.-S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Phase-change memory (PCM) cells on a single carbon nanotube field-effect transistor (CNFET) are demonstrated toward the realization of the 1TnR array architecture. The use of CNFET as one-dimensional selector, which exhibits ultra-low leakage (<; 1 pA) and large ON/OFF ratio (> 106) at high current densities, enables the cost-effective PCM cell to operate with a wide voltage margin in large 2D arrays. Uniform electrical characteristics of PCM cells over 100 cycles are obtained with the ON/OFF ratio of ~ 100 and the low SET/RESET currents of <; 1 μA.
Keywords :
carbon nanotube field effect transistors; current density; leakage currents; phase change memories; 1TnR array architecture; 2D arrays; C; CNFET; PCM cells; SET-RESET currents; current density; one-dimensional selection device; phase change memory cells; single carbon nanotube field-effect transistor; ultra-low leakage; uniform electrical characteristics; Arrays; CNTFETs; Logic gates; Phase change materials; Resistance; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894404
