A 1TnR array architecture using a one-dimensional selection device

Author

Chiyui Ahn ; Zizhen Jiang ; Chi-Shuen Lee ; Hong-Yu Chen ; Jiale Liang ; Liyanage, L.S. ; Wong, H.-S Philip

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

Phase-change memory (PCM) cells on a single carbon nanotube field-effect transistor (CNFET) are demonstrated toward the realization of the 1TnR array architecture. The use of CNFET as one-dimensional selector, which exhibits ultra-low leakage (<; 1 pA) and large ON/OFF ratio (> 10⁶) at high current densities, enables the cost-effective PCM cell to operate with a wide voltage margin in large 2D arrays. Uniform electrical characteristics of PCM cells over 100 cycles are obtained with the ON/OFF ratio of ~ 100 and the low SET/RESET currents of <; 1 μA.

Keywords

carbon nanotube field effect transistors; current density; leakage currents; phase change memories; 1TnR array architecture; 2D arrays; C; CNFET; PCM cells; SET-RESET currents; current density; one-dimensional selection device; phase change memory cells; single carbon nanotube field-effect transistor; ultra-low leakage; uniform electrical characteristics; Arrays; CNTFETs; Logic gates; Phase change materials; Resistance; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894404

Filename

6894404