Title :
NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application
Author :
Wan Gee Kim ; Hyun Min Lee ; Beom Yong Kim ; Kyoo Ho Jung ; Tae Geun Seong ; Seonghyun Kim ; Ha Chang Jung ; Hyo June Kim ; Jong Hee Yoo ; Hyung Dong Lee ; Soo Gil Kim ; Suock Chung ; Kee Jeung Lee ; Jung Hoon Lee ; Hyeong Soo Kim ; Seok Hee Lee ; Jianhua
Author_Institution :
R&D Div., SK Hynix Inc., Icheon, South Korea
Abstract :
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world´s first and best bipolar switching characteristics with the lowest operation current (20~50uA) and sneak current (~1uA) level were acquired.
Keywords :
low-power electronics; random-access storage; 1S1R cell structure; bipolar switching characteristics; cross point cell array; high density cross point ReRAM application; low power ReRAM operation; Arrays; Electrodes; Materials; Resistance; Resistors; Switches; Tin;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894405
