In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS

We first achieved ultra-low NiGe specific contact resistivities (ρ_c´s) of 2.3×10^-9Ωcm² and 1.9×10^-8Ωcm², which were both reduced from the best values ever reported by one order of magnitude, for Ge P- and N-MOS, respectively. The keys to the excellent performance were carrier activation enhancement (CAE) techniques using Ge pre-amorphization implant (PAI) or laser anneal (LA) followed by an in-situ contact process. Impact of ultra-low ρ_c´s on saturation drive current (Id_sat) was also simulated for ITRS 2015 HP nFinFET.