Title :
Twinning superlattice in VLS grown planar GaAs nanowires induced by impurity doping
Author :
Dowdy, Ryan ; Mohseni, Parsian ; Fortuna, Seth A. ; Wen, Jianguo ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
In situ doping with Zn and C impurities induces periodic twin plane boundaries along the axis of planar <;110>; GaAs nanowires grown via Au-catalyzed vapor-liquid-solid (VLS) mechanism in a MOCVD environment.
Keywords :
III-V semiconductors; MOCVD; carbon; doping; gallium arsenide; gold; nanowires; twin boundaries; zinc; Au; C; GaAs; MOCVD environment; Zn; impurity doping; periodic twin plane boundaries; twinning superlattice; vapor liquid solid grown planar nanowires; Doping; Gallium arsenide; Gold; Impurities; Nanowires; Substrates; Zinc;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358811
