3D CMOS-MEMS stacking with TSV-less and face-to-face direct metal bonding

Author

Chua, S.L. ; Razzaq, Abdul ; Wee, K.H. ; Li, K.H. ; Yu, Haoyong ; Tan, C.S.

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

CMOS readout circuit is stacked on MEMS accelerometer using face-to-face (F2F) direct metal bonding. F2F bonding provides smaller form factor, latency, and power consumption. The CMOS chip acts as an active cap that encapsulates and provides interconnect routing to the MEMS chip. Metal bonding (Al-Au) was achieved at 300°C/10min/50N. The bond quality meets the requirements during shear and helium leak tests. The stacked CMOS/MEMS chip is verified to be functional and sustains shock test of 500g.

Keywords

CMOS integrated circuits; accelerometers; aluminium; bonding processes; gold; microsensors; readout electronics; three-dimensional integrated circuits; Al-Au; CMOS chip; CMOS readout circuit; F2F direct metal bonding; MEMS accelerometer; MEMS chip; bond quality; face-to-face direct metal bonding; helium leak tests; interconnect routing; shear tests; temperature 300 C; time 10 min; Bonding; CMOS integrated circuits; Hermetic seals; Metals; Micromechanical devices; Stacking; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894410

Filename

6894410