DocumentCode :
2304708
Title :
Dilute-As GaNAs semiconductor for visible emitters
Author :
Tan, Chee-Keong ; Zhang, Jing ; Li, Xiao-Hang ; Liu, Guangyu ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
695
Lastpage :
696
Abstract :
First-principle analysis of the band structure for dilute-As GaN1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.
Keywords :
III-V semiconductors; ab initio calculations; arsenic compounds; energy gap; gallium compounds; optical materials; wide band gap semiconductors; AsGaN1-xAsx; band structure; dilute semiconductor; direct bandgap properties; first principle analysis; visible emitters; visible spectral regime; Discrete Fourier transforms; Effective mass; Gallium nitride; Light emitting diodes; Materials; Metals; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358812
Filename :
6358812
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2304708
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