DocumentCode
2304738
Title
P-doped effect on dot density in InP/AlGaInP laser diode structures
Author
Al-Ghamdi, M.S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution
Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
697
Lastpage
698
Abstract
We demonstrate the p-doping influence on number of dots explained by comparison with structures has different quantity of material deposited. Peak modal gain at high temperatures is higher in p-doped structure compare to undoped one.
Keywords
III-V semiconductors; aluminium compounds; doping; indium compounds; quantum dot lasers; InP-AlGaInP; dot density; laser diode structures; p-doped structure; peak modal gain; quantum dot lasers; Absorption; Current measurement; Density measurement; Doping; Gain measurement; Indium phosphide; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358813
Filename
6358813
Link To Document