Title :
P-doped effect on dot density in InP/AlGaInP laser diode structures
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia
Abstract :
We demonstrate the p-doping influence on number of dots explained by comparison with structures has different quantity of material deposited. Peak modal gain at high temperatures is higher in p-doped structure compare to undoped one.
Keywords :
III-V semiconductors; aluminium compounds; doping; indium compounds; quantum dot lasers; InP-AlGaInP; dot density; laser diode structures; p-doped structure; peak modal gain; quantum dot lasers; Absorption; Current measurement; Density measurement; Doping; Gain measurement; Indium phosphide; Temperature measurement;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358813
