DocumentCode
2304747
Title
All-semiconductor nanolasers on silicon
Author
Chen, Roger ; Tran, Thai-Truong D. ; Ng, Kar Wei ; Ko, Wai Son ; Chuang, Linus C. ; Sedgwick, Forrest G. ; Chang-Hasnain, Connie
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
473
Lastpage
474
Abstract
We realize room-temperature operation of nanolasers using helically-propagating modes supported by InGaAs nanopillars grown on silicon. These cavity modes provide strong optical confinement and feedback despite low index contrast between the nanopillar and silicon substrate.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser feedback; laser modes; nanophotonics; semiconductor lasers; InGaAs-Si; Si; all-semiconductor nanolasers; cavity modes; helically-propagating modes; index contrast; nanopillars; optical confinement; optical feedback; silicon substrate; temperature 293 K to 298 K;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698966
Filename
5698966
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