Title :
Direct measurement of the dynamic variability of 0.120µm2 SRAM cells in 28nm FD-SOI technology
Author :
El Husseini, Joanna ; Garros, Xavier ; Subirats, Alexandre ; Makosiej, Adam ; Weber, Olivier ; Thomas, O. ; Huard, Vincent ; Federspiel, Xavier ; Reimbold, Gilles
Author_Institution :
CEA-Leti, Grenoble, France
Abstract :
Dynamic variability of 28nm FD-SOI high density SRAMs has been directly measured and carefully modeled using a new technique based on the Supply Read Retention Voltage (SRRV) metric. It is proven that, for this technology, N&PBTI induced variability has only a small impact on the SRAM read stability after 10 years working at operating conditions.
Keywords :
SRAM chips; negative bias temperature instability; silicon-on-insulator; FD-SOI high density SRAM; FD-SOI technology; NBTI induced variability; PBTI induced variability; SRAM cells; SRAM read stability; SRRV metric; dynamic variability; operating conditions; size 28 nm; supply read retention voltage; Analytical models; Data models; SRAM cells; Stress; Stress measurement; Transistors;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894415
