Title :
Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell
Author :
Ueda, Akitsugu ; Seung-Min Jung ; Mizutani, Tomoko ; Kumar, Ajit ; Saraya, Takuya ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
A Vth self-adjusting MOSFET consisting of floating gate is proposed and the ultra-low voltage operation of the Vth self-adjustment and SRAM cell at as low as 0.1V is successfully demonstrated. In this device, Vth automatically decreases at on-state and increases at off-state, resulting in high Ion/Ioff ratio as well as stable SRAM operation at low Vdd. The minimum operation voltage at 0.1V is experimentally demonstrated in 6T SRAM cell with Vth self-adjusting nFETs and pFETs.
Keywords :
MOSFET; SRAM chips; low-power electronics; SRAM cell; floating gate; minimum operation voltage; self-adjusting MOSFET; self-adjusting nFETs; self-adjusting pFETs; ultra-low voltage operation; voltage 0.1 V; Circuit stability; MOSFET; SRAM cells; Very large scale integration; Voltage measurement;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894416
