DocumentCode
230486
Title
Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies
Author
Jiezhi Chen ; Higashi, Yu ; Kato, Kazuhiko ; Mitani, Yasunori
Author_Institution
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
fYear
2014
fDate
9-12 June 2014
Firstpage
1
Lastpage
2
Abstract
Comprehensive studies on random telegraph signal (RTS) noise have been done to understand carrier trapping processes, with a main focus on the large variations of time constants. It is observed that time constant distributions, as well as thermal activation energy distributions, weakly depend on the substrate doping concentrations or surface orientations. For individual traps, time constants are quite stable under strong negative bias stressing with serious interface degradation. More importantly, correlations of time constants and thermal activation energies with a narrow distribution window are experimentally observed for the first time. With further discussions, it is concluded that the activation energy variation is the main reason for large time constant distributions, and carrier trapping process is thought to be most likely from multiphonon-assisted tunneling process.
Keywords
electron traps; hole traps; phonons; random noise; semiconductor device noise; semiconductor doping; tunnelling; carrier trapping process; large time constant variation; multiphonon assisted tunneling process; random telegraph signal noise; substrate doping concentration; surface orientation; thermal activation energy distribution; time constant distribution; Charge carrier processes; Correlation; Doping; Noise; Photonic band gap; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4799-3331-0
Type
conf
DOI
10.1109/VLSIT.2014.6894418
Filename
6894418
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