Title :
Integration of silicon photonics in bulk CMOS
Author :
Meade, Roy ; Orcutt, Jason S. ; Mehta, Karan ; Tehar-Zahav, Ofer ; Miller, David ; Georgas, M. ; Moss, B. ; Chen Sun ; Yu-Hsin Chen ; Shainline, Jeffrey ; Wade, Mark ; Bafrali, Reha ; Sternberg, Zvi ; Machavariani, Galina ; Sandhu, Gurtej ; Popovic, M. ;
Author_Institution :
Process R&D, Micron Technol., Inc., Boise, ID, USA
Abstract :
The first monolithic process flow integrating silicon photonics on operational bulk CMOS has been developed. Features include deep-trench isolation, polysilicon waveguides, grating couplers, filters, modulators, and detectors. Fully functional on-chip CMOS enables Tx/Rx operation while minimizing interconnect parasitics. With the addition of an external 1280nm source, a fully functional optical link (5Gb/s 2.8pJ/b), capable of wavelength division multiplexing, has been demonstrated. In addition to the polysilicon resonant detector used in the link, a monolithically-integrated Silicon-Germanium selective epitaxial growth based photodetector was developed.
Keywords :
CMOS integrated circuits; Ge-Si alloys; epitaxial growth; integrated optics; isolation technology; monolithic integrated circuits; optical couplers; optical interconnections; optical waveguides; photodetectors; wavelength division multiplexing; SiGe; deep trench isolation; grating couplers; interconnect parasitics; monolithic process flow; monolithically integrated selective epitaxial growth based photodetector; operational bulk CMOS; polysilicon resonant detector; polysilicon waveguides; silicon photonics; wavelength 1280 nm; wavelength division multiplexing; Attenuation; CMOS integrated circuits; Couplers; Gratings; Optical waveguides; Silicon germanium; Silicon photonics; CMOS; optical interconnect; silicon photonics;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894427
