DocumentCode :
2305037
Title :
A systematic design procedure for floating-gate MOS based class-AB Log-domain filters
Author :
Farshidi, Ebrahim ; Alaei-sheini, Navid
Author_Institution :
Dept. of Electr. Eng., Shahid Chamran Univ. of Ahvaz, Ahvaz
fYear :
2009
fDate :
9-11 April 2009
Firstpage :
868
Lastpage :
872
Abstract :
In this paper, a new approach for designing of class-AB current-mode log-domain filters based on nonlinear transconductance is presented. For implementation of the nonlinear transconductance, FG-MOS transistors that operate in weak inversion region are employed. The proposed nonlinear transconductance-capacitor (Gm-C) structure for filters is derived from its corresponding conventional transconductance-capacitor (gm-C) in a systematic way. Therefore, this synthesis is independent of system size, regular, general and with a simple topology. Also, as the filters are designed based on the transistors working in weak-inversion they feature, low supply voltage, low power consumption, immune from body effect and with low circuit complexity. The simulation results by HSPICE show the validity of the proposed technique.
Keywords :
MOSFET; SPICE; capacitors; filters; HSPICE; floating-gate MOS; log-domain filters; nonlinear transconductance; power consumption; systematic design procedure; transconductance-capacitor; Circuit simulation; Circuit synthesis; Circuit topology; Complexity theory; Energy consumption; Filters; Immune system; Low voltage; Power supplies; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal Processing and Communications Applications Conference, 2009. SIU 2009. IEEE 17th
Conference_Location :
Antalya
Print_ISBN :
978-1-4244-4435-9
Electronic_ISBN :
978-1-4244-4436-6
Type :
conf
DOI :
10.1109/SIU.2009.5136534
Filename :
5136534
Link To Document :
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