DocumentCode :
2305077
Title :
Structural and electrical characterization of thin Bi2Te 3 films grown with MBE
Author :
Kikuchi, Satoru ; Iwata, Yuji ; Hatta, Eiji ; Nagao, Jiro ; Mukasa, Koichi
Author_Institution :
Fac. of Eng., Hokkaido Univ., Sapporo, Japan
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
97
Lastpage :
100
Abstract :
Thin Bi2Te3 films were grown on Al2 O3(0001) substrates with molecular beam epitaxy (MBE). X-ray diffraction (XRD) was used to confirm the orientation and crystalline quality of the films; the c-axis was oriented normal to the film surface. It was found that the full width at half-maximum intensity (FWHM) of diffraction peaks in the XRD pattern depends on the deposition conditions such as substrate temperature and the flux ratio. The reflection high-energy electron diffraction (RHEED) pattern of the deposited films shows a streak pattern at the initial stage of growth. Electrical resistivity, carrier concentrations and Hall mobility were measured in the temperature range from 77K to 300K. The film with narrower FWHM exhibited a lower carrier concentration (5.1×1019 cm-3) and electrically intrinsic characteristics around room temperature. For the first time a clear separation of slopes of the Hall mobility in a thin Bi2Te3 film is observed. On the other hand, the films with wider FWHM, which have higher carrier concentrations, exhibited a metallic behavior. The electrical properties are closely related to the variation of FWHM of diffraction peaks in the XRD pattern
Keywords :
Hall mobility; bismuth compounds; carrier density; electrical resistivity; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; 77 to 300 K; Al2O3; Al2O3(0001) substrates; Bi2Te3; Hall mobility; MBE; RHEED; X-ray diffraction; carrier concentration; crystalline quality; electrical resistivity; flux ratio; substrate temperature; thin films; Bismuth; Crystallization; Hall effect; Molecular beam epitaxial growth; Optical films; Substrates; Tellurium; Temperature measurement; X-ray diffraction; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.666983
Filename :
666983
Link To Document :
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