Title :
Si-Ge surface-normal asymmetric fabry-perot quantum-confined stark effect electroabsorption modulator
Author :
Edwards, Elizabeth H. ; Audet, Ross M. ; Rong, Yiwen ; Claussen, Stephanie A. ; Schaevitz, Rebecca K. ; Tasyurek, Emel ; Ren, Shen ; Kamins, Ted I. ; Harris, James S. ; Miller, David A B ; Dosunmu, Olufemi I. ; Ünlü, M. Selim
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.
Keywords :
CMOS integrated circuits; Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; germanium; integrated optoelectronics; optical design techniques; quantum confined Stark effect; semiconductor devices; semiconductor quantum wells; CMOS-compatible integrated optical modulators; Ge-SiGe; asymmetric Fabry-Perot design; electroabsorption modulator; quantum wells; surface-normal asymmetric Fabry-Perot quantum-confined Stark effect; surface-normal semiconductor modulator structure; QCSE; SiGe; integrated optoelectronics; modulators; optical interconnections;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698987
