Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices

We present a systematic investigation of the impact of aggressive lateral and vertical TiN/Hf(Al)O/Hf/TiN RRAM cells stack scaling down to 10nmx10nm cell size and 5nm thickness on performance and reliability. We demonstrate that median values and 1-sigma dispersion of programming voltages, resistances and disturb are not affected by lateral and vertical scaling in agreement with QPC/hour glass conduction model. We also demonstrate that endurance robustness is instead adversely affected by both a reduction of total stack thickness and lateral cell size, the latter probably due to a reduction of the available ion supply in the oxygen exchange layer (OEL) as consequence of scaling.