Fast step-down set algorithm of resistive switching memory with low programming energy and significant reliability improvement

Author

Meng, Yongqing ; Xue, X.Y. ; Song, Y.L. ; Yang, J.G. ; Chen, B.A. ; Lin, Y.Y. ; Zou, Q.T. ; Huang, R. ; Wu, J.G.

Author_Institution

ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We propose an asymmetric write algorithm of step-down set/step-up reset without verify for the first time. The demonstration is carried out on a 128Kb test macro of AlO_x/WO_x bi-layer ReRAM fabricated based on 0.18μm logic process. The set and reset energy per bit are reduced by 34% and 20% respectively. The set and reset access time decrease by 54% and 32% respectively. The mean value of endurance distribution is improved by 2 orders of magnitude from 10⁷ to 10⁹. R_on and R_off retention failure rate is reduced by 88% and 71% respectively. R_off/R_on window enlarges from 25× to 180×. The reliability improvements are attributed to refinement of CF shape and size by the step-down set algorithm.

Keywords

aluminium compounds; random-access storage; reliability; tungsten compounds; AlO_x-WO_x; asymmetric write algorithm; bilayer ReRAM; low programming energy; memory size 128 KByte; reset access time; resistive switching memory; retention failure rate; size 0.18 mum; step-down set algorithm; Ions; Optimization; Programming; Reliability; Shape; Switches; Very large scale integration; ReRAM; endurance; retention; self-adaptive;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894435

Filename

6894435