Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROMs

Author

Huang, Chimoon ; Wang, Tahui ; Chen, T. ; Peng, N.C. ; Chang, A. ; Shone, F.C.

Author_Institution

Technol. Dev. Dept., Macronix Internat. Co. Ltd., Taiwan

fYear

1995

fDate

4-6 April 1995

Firstpage

61

Lastpage

64

Abstract

Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.

Keywords

EPROM; MOS memory circuits; hot carriers; integrated circuit modelling; integrated circuit reliability; semiconductor device models; tunnelling; 2D simulation; Fowler-Nordheim electron tunneling; MOSFET structure; band-to-band tunneling; charge transport; erasing gate current; erasing mechanism; flash EEPROMs; hot carrier effect; hot hole injection; two-dimensional simulation; Analytical models; Charge carrier processes; EPROM; Electrons; Hot carrier effects; Hot carriers; MOSFET circuits; Medical simulation; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2031-X

Type

conf

DOI

10.1109/RELPHY.1995.513655

Filename

513655