Title :
Mechanical reliability effects of back-grinding upon GaAs LSI chips
Author :
Nishiguchi, Masanori ; Goto, Noboru ; Nishizawa, Hideaki
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
The brittle damage layer of background GaAs LSI chips has been investigated through fracture toughness experiments, etching rate measurements, and SEM (scanning electron microscope) observations. The rough grinding damage which has a negative influence on the mechanical reliability of GaAs LSI chips penetrates to a 5-μm depth on the finished surface. This is a little larger than than expected because the ductile damage layer due to rough grinding is only 0.6 μm thick. However, this damage can be completely removed by 5-μm mirror grinding and 1-μm chemical etching, because the mirror grinding damage generates a 0.6-μm-thick ductile deformation layer and a negligibly thin brittle deformation layer, which do not influence mechanical reliability
Keywords :
III-V semiconductors; MESFET integrated circuits; brittleness; ductile fracture; etching; fracture toughness testing; gallium arsenide; grinding; integrated circuit reliability; integrated circuit technology; large scale integration; scanning electron microscopy; surface topography; GaAs; GaAs LSI chips; GaAs MESFET; SEM; back-grinding; biaxial loading; brittle damage layer; chemical etching; ductile damage layer; etching rate; fracture toughness; mechanical reliability; mirror grinding; rough grinding damage; surface topology; wafer thinning technology; Etching; Gallium arsenide; Large scale integration; Mirrors; Rough surfaces; Scanning electron microscopy; Semiconductor device measurement; Surface cracks; Surface finishing; Surface roughness;
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
DOI :
10.1109/ECTC.1993.346702
