DocumentCode :
230525
Title :
1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films
Author :
Tai, M. ; Ohyanagi, T. ; Kinoshita, Moto ; Morikawa, T. ; Akita, K. ; Kato, Shigeo ; Shirakawa, H. ; Araidai, M. ; Shiraishi, Kotaro ; Takaura, N.
Author_Institution :
Low-power Electron. Assoc. & Project, Tsukuba, Japan
fYear :
2014
fDate :
9-12 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
A 1T-1R pillar-type “topological-switching RAM” (TRAM) and the data retention of GeTe/Sb2Te3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge2Sb2Te5. From data retention evaluation, the TRAM was found to endure the retention at 260 °C for 18 hours.
Keywords :
antimony compounds; germanium compounds; phase change materials; random-access storage; thin films; 1T-1R pillar-type topological-switching random access memory; Ge2Sb2Te5; GeTe-Sb2Te3; TRAM; conventional PCM; data retention evaluation; super-lattice films; temperature 260 degC; time 18 hour; voltage 2 V; Cleaning; Films; Phase change materials; Random access memory; Resistance; Resistors; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4799-3331-0
Type :
conf
DOI :
10.1109/VLSIT.2014.6894436
Filename :
6894436
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=230525
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