A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retention

Author

Banno, N. ; Tada, Mitsunori ; Sakamoto, Takanori ; Miyamura, Makoto ; Okamoto, K. ; Iguchi, Noriyuki ; Nohisa, T. ; Hada, Hiromitsu

Author_Institution

Low-power Electron. Ass°Ciation & Project (LEAP), Tsukuba, Japan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

Fast (10ns) and low voltage (2V) programming of Cu atom switch has been demonstrated in a 1Mb switch array for the first time. A newly developed redox-control buffer of Al_0.5Ti_0.5O_x leads to extremely steep slope switching of voltage dependent time-to-ON-state (56mV/decade), by eliminating metallic Al residues at the Cu surface. The programmed ON-state shows long lifetimes both under data-retention test at 260°C and DC stress test (I_max=140μA) at 125°C. A redox-control technology is indispensable for conducting bridges used in a low-power, nonvolatile programmable logic (NPL).

Keywords

aluminium alloys; buffer storage; copper; integrated circuit testing; programmable logic devices; titanium alloys; Al_0.5Ti_0.5O_x; Cu; DC stress test; NPL; complementary-atom-switch array; current 140 muA; data-retention test; high-temperature retention; low voltage programming; nonvolatile programmable logic; redox-control buffer; slope switching; temperature 125 degC; temperature 260 degC; time 10 ns; time-to-on-state; voltage 2 V; Arrays; Metals; Optical switches; Programming; Resistance; Stress; Atom switch; BEOL device; Nonvolatile programmable logic;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894437

Filename

6894437