Title :
Growths of lattice-matched AlInN / GaN for optoelectronics applications
Author :
Liu, Guangyu ; Zhao, Hongping ; Zhang, Jing ; Tong, Hua ; Huang, G.S. ; Tansu, Nelson
Abstract :
Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780°C and pressure of 20 Torr.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; optical materials; semiconductor growth; wide band gap semiconductors; AlInN-GaN; chemical vapor deposition; growth condition; lattice-matched AlInN / GaN growth; temperature 780 degC;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698997
