DocumentCode :
2305462
Title :
Wavelength conversion using polarization dependence of photo-induced phase shift in an InGaAsP MQW-EA modulator
Author :
Kato, Masaki ; Kumtornkittikul, Chaiyasit ; Nakano, Yoshiaki
Author_Institution :
Graduate Sch. of Frontier Sci., Univ. of Tokyo, Japan
fYear :
2002
fDate :
17-22 Mar 2002
Firstpage :
595
Lastpage :
596
Abstract :
Summary form only given. We have experimentally demonstrated wavelength conversion using polarization dependence of photo-induced phase shift in a compressive-strained InGaAsP MQW-EA modulator. It requires relatively small signal power less than +8 dBm (coupling loss is included). It also gives high extinction ratio more than 25 dB as well as enlargement of extinction ratio from 10 dB (signal light) to 23 dB (wavelength-converted light).
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical communication equipment; optical losses; optical wavelength conversion; semiconductor quantum wells; wavelength division multiplexing; InGaAsP; InGaAsP MQW-EA modulator; compressive strained; electroabsorption modulators; high extinction ratio; photo-induced phase shift; polarization dependence; small signal power; wavelength conversion; wavelength-converted light; Absorption; Excitons; Extinction ratio; Optical polarization; Optical wavelength conversion; Phase modulation; Probes; Quantum well devices; Tellurium; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
Type :
conf
DOI :
10.1109/OFC.2002.1036584
Filename :
1036584
Link To Document :
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