DocumentCode :
2305470
Title :
Peculiarities of the figure of merit temperature dependence in n-Bi 2(Te,Se)3 solid solution at low charge carrier concentration
Author :
Konstantinov, P.P. ; Kutasov, V.A.
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
105
Lastpage :
108
Abstract :
A study has been made of the temperature dependence of the thermoelectric properties of n-Bi2(Te,Se)3 solid solutions (x=0.3 and 0.36). An optimal charge carrier concentration in the low temperature range (80-120) K was provided with addition of excess Te. A minimum of the Z=f(T) relation was observed near 120 K; the value of Z is increased when the temperature falls to 80 K. This may be explained by the absence of interband scattering of carriers at the studied carrier concentrations
Keywords :
bismuth compounds; carrier density; semiconductor materials; solid solutions; thermoelectricity; 80 to 120 K; Bi2(TeSe)3; carrier concentration; excess Te; figure of merit; solid solution; temperature dependence; thermoelectric properties; Acoustic scattering; Charge carriers; Magneto electrical resistivity imaging technique; Scattering parameters; Solids; Tellurium; Temperature dependence; Temperature distribution; Temperature sensors; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.666985
Filename :
666985
Link To Document :
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