• DocumentCode
    2305470
  • Title

    Peculiarities of the figure of merit temperature dependence in n-Bi 2(Te,Se)3 solid solution at low charge carrier concentration

  • Author

    Konstantinov, P.P. ; Kutasov, V.A.

  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    A study has been made of the temperature dependence of the thermoelectric properties of n-Bi2(Te,Se)3 solid solutions (x=0.3 and 0.36). An optimal charge carrier concentration in the low temperature range (80-120) K was provided with addition of excess Te. A minimum of the Z=f(T) relation was observed near 120 K; the value of Z is increased when the temperature falls to 80 K. This may be explained by the absence of interband scattering of carriers at the studied carrier concentrations
  • Keywords
    bismuth compounds; carrier density; semiconductor materials; solid solutions; thermoelectricity; 80 to 120 K; Bi2(TeSe)3; carrier concentration; excess Te; figure of merit; solid solution; temperature dependence; thermoelectric properties; Acoustic scattering; Charge carriers; Magneto electrical resistivity imaging technique; Scattering parameters; Solids; Tellurium; Temperature dependence; Temperature distribution; Temperature sensors; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.666985
  • Filename
    666985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2305470