Title :
Room temperature gate-controlled electron spin relaxation time in (110) GaAs/AlGaAs quantum wells
Author :
Iba, Satoshi ; Koh, Shinji ; Kawaguchi, Hitoshi
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
We have successfully fabricated a high-quality (110) p-i-n structure with GaAs/AlGaAs quantum wells (QWs) and demonstrated a tenfold modulation of electron spin relaxation time in the QWs by applying an electric field at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; electron spin-lattice relaxation; gallium arsenide; quantum confined Stark effect; semiconductor quantum wells; GaAs-AlGaAs; electric field; electron spin relaxation time; gate control; p-i-n structure; quantum wells; room temperature; temperature 293 K to 298 K;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5699004
