DocumentCode
2305485
Title
Mid-infrared designer metals
Author
Law, S. ; Adams, D.C. ; Taylor, A.M. ; Wasserman, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana Champaign, Champaign, IL, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
786
Lastpage
787
Abstract
We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro-particles fabricated from these materials are shown to support localized surface plasmon modes.
Keywords
Fourier transform spectra; III-V semiconductors; indium compounds; infrared spectra; micro-optics; microfabrication; molecular beam epitaxial growth; optical fabrication; plasmonics; semiconductor epitaxial layers; semiconductor growth; silicon; surface plasmon resonance; InAs:Si; epitaxially-grown highly-doped semiconductors; localized surface plasmon modes; microparticles; plasma wavelengths; plasmonic midinfrared designer metals; Films; Metals; Optical imaging; Optical surface waves; Plasmons; Reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358858
Filename
6358858
Link To Document