• DocumentCode
    2305680
  • Title

    Electrophysical properties of Bi2Te2.85Se0.15 single crystals doped with copper

  • Author

    Svechnikova, T.E. ; Maksimova, N.M. ; Konstantinov, P.P.

  • Author_Institution
    A.A. Baikov Inst. of Metall., Acad. of Sci., Moscow, Russia
  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    The influence of copper addition on thermoelectric and electrophysical properties of Bi2Te2.85Se0.15 solid solutions grown by the Czochralski technique is studied. The effective segregation coefficient of copper Keff=0.2 is determined. Doping with small quantities of copper (up to 0.05 at.% in charge) leads to enhancement of carrier mobility and thermoelectric figure of merit, Z=(3.1-3.4) 10-3 K-1 in the temperature range of 220-350 K. The single crystals with copper content up to 0.1 at.% in charge are found to retain stability of properties. Annealing at 280°C for 150 hours did not cause any significant change in the thermoelectric properties
  • Keywords
    annealing; bismuth compounds; carrier mobility; copper; crystal growth from melt; segregation; semiconductor materials; solid solutions; thermoelectricity; 220 to 350 K; Bi2Te2.85Se0.15:Cu; Czochralski technique; annealing; carrier mobility; copper addition; effective segregation coefficient; single crystals; solid solutions; thermoelectric figure of merit; Annealing; Bismuth; Copper; Crystals; Doping; Solids; Tellurium; Temperature distribution; Thermal stability; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.666986
  • Filename
    666986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2305680