DocumentCode :
2305743
Title :
GaInAsP/Si hybrid Fabry-Perot laser using N2 plasma activated low temperature bonding
Author :
Hayashi, Yusuke ; Osabe, Ryo ; Fukuda, Keita ; Atsumi, Yuki ; Kang, JoonHyun ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
818
Lastpage :
819
Abstract :
A GaInAsP/Si hybrid Fabry-Perot laser, fabricated by low temperature N2 plasma surface activated bonding on a Si substrate, was demonstrated. Lasing operation at room temperature was realized with a threshold current density of 0.85 kA/cm2.
Keywords :
III-V semiconductors; bonding processes; current density; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; plasma materials processing; quantum well lasers; silicon; GaInAsP-Si; N2 plasma activated low temperature bonding; Si; Si substrate; hybrid Fabry-Perot laser; lasing operation; temperature 293 K to 298 K; threshold current density; Bonding; Indium phosphide; Lasers; Measurement by laser beam; Plasma temperature; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358874
Filename :
6358874
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2305743
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