Title :
Temperature dependence of the field emission from monolayer graphene
Author :
Wenqing Chen ; Yunkun Su ; Huanjun Chen ; Shaozhi Deng ; Ningsheng Xu ; Jun Chen
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
Temperature dependence of the field emission from monolayer graphene was investigated in order to understand the field emission process from graphene. The results show that the field emission current under the same voltage increases dramatically with temperature rising from 300 K to 573 K. These results may be associated with a narrow energy gap of morphological disordered graphene, in which electrons can be excited from valence band to conduction band easily by increasing temperature.
Keywords :
conduction bands; electron field emission; energy gap; graphene; monolayers; valence bands; C; conduction band; electron field emission; monolayer graphene; morphological disordered graphene; narrow energy gap; temperature dependence; valence band; Cities and towns; Educational institutions; Monolayer graphene; field emission; temperature dependence;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894747