New profiled silicon PIN photodiode for scintillation detector

Author

Saitoh, Y. ; Akamine, T. ; Satoh, K. ; Inoue, M. ; Yamanaka, J. ; Aoki, K. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Avrillon, S. ; Okuno, S.

Author_Institution

Seiko Instrum. Inc., Chiba, Japan

Volume

1

fYear

1994

fDate

30 Oct-5 Nov 1994

Firstpage

101

Abstract

Silicon photodiodes (planar PIN) are employed for the read out of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for a quarter-micron ULSI process. In this study, several types of PIN photodiodes, in which a p⁺ layer was formed by MLD (MLD-PIN) or BF₂ ion implantation (BF₂ I/I-PIN), have been examined. The MLD-PIN has a shallow p⁺ junction depth (x_j) with sufficient high surface concentration, and simply and easily provides good performance for a short-wavelength photo sensitivity

Keywords

detector circuits; doping profiles; elemental semiconductors; ion implantation; nuclear electronics; p-i-n photodiodes; silicon; solid scintillation detectors; Si:BF₂; ion implantation; molecular layer doping; profiled silicon PIN photodiode; quarter-micron ULSI process; scintillation detector; scintillation shower counters; shallow p⁺ junction depth; short-wavelength photo sensitivity; surface concentration; Amorphous materials; Annealing; Boron; Doping; Ion implantation; PIN photodiodes; Radiation detectors; Scintillation counters; Silicon; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-2544-3

Type

conf

DOI

10.1109/NSSMIC.1994.474382

Filename

474382