• DocumentCode
    2305941
  • Title

    A silicon-on-silicon packaging technology for advanced ULSI chips

  • Author

    Kousaka, T. ; Senba, Naoji ; Nishizawa, Atsushi ; Takahashi, Nobuaki ; Shimoto, Tadanori ; Koike, Tsuneo

  • Author_Institution
    NEC Corp., Sagamihara, Japan
  • fYear
    1993
  • fDate
    1-4 Jun 1993
  • Firstpage
    941
  • Lastpage
    947
  • Abstract
    A RISC (reduced instruction set computer) module for high-performance workstations has been made to demonstrate the advantages and technical feasibility of the silicon-on-silicon technology. The module consists of one 0.8-μm CMOS CPU (central processing unit) one 0.8-μm CMOS FPU, and six 1.0-μm BiCMOS cache memories. The eight chips are attached on a 39×47 mm square silicon substrate with 120-μm pitch flip chip bonding of 80-μm-diameter tin-lead bumps. Two-layer interconnections for high-speed signals are formed with 20-μm line and 80-μm space on the silicon substrate. The conductors are 4-μm thick gold formed by electroplating and the dielectric film is 10-μm-thick polyimide. A decoupling capacitance of about 0.8 nF is formed in the substrate. The module was evaluated using reliability and functional tests. The reliability tests included thermal cycling, power cycling, and mechanical strength tests. The functional test was carried out by connecting the module to an IBM-PC/IF board and operating with a test program. Both evaluations were successful
  • Keywords
    VLSI; circuit reliability; elemental semiconductors; flip-chip devices; integrated circuit technology; microassembling; microprocessor chips; multichip modules; reduced instruction set computing; silicon; 0.8 nF; 0.8 to 120 micron; Au; BiCMOS cache memories; CMOS CPU; CMOS FPU; MCM; RISC module; Si-on-Si packaging technology; ULSI chips; central processing unit; decoupling capacitance; dielectric film; electroplating; flip chip bonding; functional tests; high-performance workstations; polyimide; reduced instruction set computer module; reliability tests; thick Au conductors; two-layer interconnections; CMOS process; CMOS technology; Central Processing Unit; Computer aided instruction; Dielectric substrates; Packaging; Reduced instruction set computing; Silicon; Testing; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1993. Proceedings., 43rd
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-0794-1
  • Type

    conf

  • DOI
    10.1109/ECTC.1993.346740
  • Filename
    346740