Title :
Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices
Author :
Dissanayake, S. ; Sugahara, S. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Dept. of Electron., Univ. of Tokyo, Tokyo
Abstract :
In this paper, fabrication of (110) oriented ultra-thin GOI substrates by using Ge condensation method is demonstrated. An initial structure of Si/Si0.7Ge0.3/ (110) SOI layers was fabricated by MBE and, high temperature oxidation was carried out to form (110) oriented pure GOI structures. The resultant thickens of GOI layer was confirmed to be 12 nm. The surface orientation was confirmed to be the (110)-oriented by the XRD and TED methods. The measurements of pseudo-MOSFET devices revealed that forming gas annealing was very effective in reducing the leakage current. Fabricated Pt-Germanide (110) GOI pMOSFETs were found to normally operate.
Keywords :
Ge-Si alloys; MOSFET; X-ray diffraction; annealing; atomic force microscopy; electron diffraction; elemental semiconductors; film condensation; germanium; leakage currents; molecular beam epitaxial growth; oxidation; semiconductor epitaxial layers; silicon; silicon-on-insulator; thin film transistors; transmission electron microscopy; (110) surface orientation; GOI layers; Ge condensation; GeSi-SiO2; MBE; SOI structures; TED; X-ray diffraction; XRD; gas annealing; germanium-on-insulator; high temperature oxidation; leakage current; metal oxide semiconductor field effect transistor; molecular beam epitaxy; pMOSFET devices; silicon-on-insulator; size 12 nm; transmission electron diffraction; Annealing; Current measurement; Fabrication; Germanium silicon alloys; Leakage current; MOSFET circuits; Oxidation; Silicon germanium; Temperature; X-ray scattering;
Conference_Titel :
Industrial and Information Systems, 2007. ICIIS 2007. International Conference on
Conference_Location :
Penadeniya
Print_ISBN :
978-1-4244-1151-1
Electronic_ISBN :
978-1-4244-1152-8
DOI :
10.1109/ICIINFS.2007.4579231
