Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices

Author

Dissanayake, S. ; Sugahara, S. ; Takenaka, M. ; Takagi, S.

Author_Institution

Dept. of Electron., Univ. of Tokyo, Tokyo

fYear

2007

fDate

9-11 Aug. 2007

Firstpage

513

Lastpage

516

Abstract

In this paper, fabrication of (110) oriented ultra-thin GOI substrates by using Ge condensation method is demonstrated. An initial structure of Si/Si_0.7Ge_0.3/ (110) SOI layers was fabricated by MBE and, high temperature oxidation was carried out to form (110) oriented pure GOI structures. The resultant thickens of GOI layer was confirmed to be 12 nm. The surface orientation was confirmed to be the (110)-oriented by the XRD and TED methods. The measurements of pseudo-MOSFET devices revealed that forming gas annealing was very effective in reducing the leakage current. Fabricated Pt-Germanide (110) GOI pMOSFETs were found to normally operate.

Keywords

Ge-Si alloys; MOSFET; X-ray diffraction; annealing; atomic force microscopy; electron diffraction; elemental semiconductors; film condensation; germanium; leakage currents; molecular beam epitaxial growth; oxidation; semiconductor epitaxial layers; silicon; silicon-on-insulator; thin film transistors; transmission electron microscopy; (110) surface orientation; GOI layers; Ge condensation; GeSi-SiO₂; MBE; SOI structures; TED; X-ray diffraction; XRD; gas annealing; germanium-on-insulator; high temperature oxidation; leakage current; metal oxide semiconductor field effect transistor; molecular beam epitaxy; pMOSFET devices; silicon-on-insulator; size 12 nm; transmission electron diffraction; Annealing; Current measurement; Fabrication; Germanium silicon alloys; Leakage current; MOSFET circuits; Oxidation; Silicon germanium; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial and Information Systems, 2007. ICIIS 2007. International Conference on

Conference_Location

Penadeniya

Print_ISBN

978-1-4244-1151-1

Electronic_ISBN

978-1-4244-1152-8

Type

conf

DOI

10.1109/ICIINFS.2007.4579231

Filename

4579231