• DocumentCode
    230611
  • Title

    In-situ measurement of temperature dependence of emission current and pressure of a fully-sealed ZnO nanowire field emission device

  • Author

    Ke, Y.L. ; Liao, M.X. ; Li, Y.F. ; Deng, S.Z. ; Xu, N.S. ; Jun Chen

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2014
  • fDate
    6-10 July 2014
  • Firstpage
    57
  • Lastpage
    58
  • Abstract
    In order to evaluate the performance of ZnO nanowire field emission display under different temperature, the temperature dependence of field emission current of a fully-sealed diode-structured field emission device using ZnO nanowire cold cathode was studied when the temperature changed from -60°C to 80°C. The pressure inside the device was also measured. It is found that the emission current decreases with increasing temperature, which is attributed to the increasing pressure. The findings are crucial to optimize the manufacture process of the FED using ZnO nanowire cold cathode.
  • Keywords
    II-VI semiconductors; cathodes; electron field emission; nanowires; semiconductor device manufacture; temperature measurement; wide band gap semiconductors; zinc compounds; ZnO; field emission current; fully sealed diode structured field emission device; nanowire cold cathode; nanowire field emission device; temperature dependence; Cathodes; Zinc oxide; ZnO nanowire; field emission display; field emitter; temperature dependent;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
  • Conference_Location
    Engelberg
  • Print_ISBN
    978-1-4799-5306-6
  • Type

    conf

  • DOI
    10.1109/IVNC.2014.6894757
  • Filename
    6894757