• DocumentCode
    2306209
  • Title

    Future of silicon integrated circuit technology

  • Author

    Iwai, Hiroshi

  • Author_Institution
    Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama
  • fYear
    2007
  • fDate
    9-11 Aug. 2007
  • Firstpage
    571
  • Lastpage
    576
  • Abstract
    CMOS technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will governed the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips have been available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progress on the key technologies for the nano-CMOS IC fabrication in the next fifteen years.
  • Keywords
    CMOS integrated circuits; integrated circuit manufacture; monolithic integrated circuits; nanoelectronics; IC manufacturing; International Technology Roadmap for Semiconductors; nano-CMOS IC fabrication; nano-CMOS microchips; nano-CMOS technology; silicon integrated circuit technology; CMOS technology; Electronic circuits; Humans; Information systems; Integrated circuit technology; Power generation economics; Production; Random access memory; Semiconductor device manufacture; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial and Information Systems, 2007. ICIIS 2007. International Conference on
  • Conference_Location
    Penadeniya
  • Print_ISBN
    978-1-4244-1151-1
  • Electronic_ISBN
    978-1-4244-1152-8
  • Type

    conf

  • DOI
    10.1109/ICIINFS.2007.4579241
  • Filename
    4579241