Title :
Future of silicon integrated circuit technology
Author_Institution :
Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama
Abstract :
CMOS technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will governed the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips have been available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progress on the key technologies for the nano-CMOS IC fabrication in the next fifteen years.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; monolithic integrated circuits; nanoelectronics; IC manufacturing; International Technology Roadmap for Semiconductors; nano-CMOS IC fabrication; nano-CMOS microchips; nano-CMOS technology; silicon integrated circuit technology; CMOS technology; Electronic circuits; Humans; Information systems; Integrated circuit technology; Power generation economics; Production; Random access memory; Semiconductor device manufacture; Silicon;
Conference_Titel :
Industrial and Information Systems, 2007. ICIIS 2007. International Conference on
Conference_Location :
Penadeniya
Print_ISBN :
978-1-4244-1151-1
Electronic_ISBN :
978-1-4244-1152-8
DOI :
10.1109/ICIINFS.2007.4579241
