DocumentCode
2306209
Title
Future of silicon integrated circuit technology
Author
Iwai, Hiroshi
Author_Institution
Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama
fYear
2007
fDate
9-11 Aug. 2007
Firstpage
571
Lastpage
576
Abstract
CMOS technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will governed the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips have been available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progress on the key technologies for the nano-CMOS IC fabrication in the next fifteen years.
Keywords
CMOS integrated circuits; integrated circuit manufacture; monolithic integrated circuits; nanoelectronics; IC manufacturing; International Technology Roadmap for Semiconductors; nano-CMOS IC fabrication; nano-CMOS microchips; nano-CMOS technology; silicon integrated circuit technology; CMOS technology; Electronic circuits; Humans; Information systems; Integrated circuit technology; Power generation economics; Production; Random access memory; Semiconductor device manufacture; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial and Information Systems, 2007. ICIIS 2007. International Conference on
Conference_Location
Penadeniya
Print_ISBN
978-1-4244-1151-1
Electronic_ISBN
978-1-4244-1152-8
Type
conf
DOI
10.1109/ICIINFS.2007.4579241
Filename
4579241
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