Title :
Evaluation of radiation tolerance of silicon dioxide layer for field emitter arrays
Author :
Gotoh, Yusuke ; Tsuji, Hiroyuki ; Yoshizawa, Shingo ; Nagao, Masaru ; Akiyoshi, Masanori ; Takgai, Ikuji
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
Current-voltage characteristics of silicon dioxide layer prepared by chemical vapor deposition with TEOS, which is used as an insulting layer for field emitter arrays, were investigated with and without a MeV ion irradiation, in order to demonstrate high radiation tolerance. Sandwich structures with niobium electrodes and silicon dioxide layers were irradiated by a 2 MeV helium ion beam with the diameter of 1 mm to the ion dose of 0.05 mC. It was found that no significant deterioration of insulating properties of the samples.
Keywords :
chemical vapour deposition; electrodes; field emitter arrays; ion beam effects; ion beams; niobium; sandwich structures; silicon compounds; MeV ion irradiation; Nb; SiO2; TEOS; chemical vapor deposition; current-voltage characteristics; electron volt energy 2 MeV; field emitter arrays; helium ion beam; insulting layer; niobium electrodes; radiation tolerance; sandwich structures; silicon dioxide layer; size 1 mm; Arrays; Current measurement; Electrodes; Insulators; Performance evaluation; Radiation effects; field emitter array; radiation torelance; silicon dioxide;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894764
