Four-channel receiver optoelectronic integrated circuit arrays for ultra-high speed optical interconnects

Author

Nishiyama, Naoto ; Sasaki, Goro ; Yano, Hiroshi ; Murata, Michio ; Kamiyama, Hiroyuki ; Hayashi, Hideki

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

1993

fDate

1-4 Jun 1993

Firstpage

802

Lastpage

807

Abstract

Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays have been successfully fabricated. GaInAs pin PDs and AlInAs/GaInAs high electron mobility transistors were monolithically integrated on an InP substrate. The high frequency characteristics of the receiver OEIC arrays were evaluated with on-wafer microwave probing. Two types of receiver OEIC arrays were demonstrated. One type of array exhibited high speed operation up to 5.0 Gb/s and low crosstalk characteristics less than -38 dB, while the other exhibited a high sensitivity of -21.5 dBm at 3.0 Gb/s and low crosstalk characteristics less than -40 dB

Keywords

VLSI; crosstalk; high-speed optical techniques; integrated optoelectronics; optical interconnections; optical receivers; 3.0 Gbit/s; 5.0 Gbit/s; AlInAs-GaInAs; AlInAs/GaInAs high electron mobility transistors; GaInAs; GaInAs pin PDs; InP; InP substrate; crosstalk; four-channel receiver; high frequency characteristics; monolithic integration; on-wafer microwave probing; optoelectronic integrated circuit arrays; sensitivity; ultra-high speed optical interconnects; Crosstalk; HEMTs; Indium phosphide; Integrated optics; MODFETs; Optical arrays; Optical interconnections; Optical receivers; Optoelectronic devices; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1993. Proceedings., 43rd

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0794-1

Type

conf

DOI

10.1109/ECTC.1993.346757

Filename

346757