Title :
Four-channel receiver optoelectronic integrated circuit arrays for ultra-high speed optical interconnects
Author :
Nishiyama, Naoto ; Sasaki, Goro ; Yano, Hiroshi ; Murata, Michio ; Kamiyama, Hiroyuki ; Hayashi, Hideki
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
Ultra-high speed and low crosstalk four-channel receiver optoelectronic integrated circuit (OEIC) arrays have been successfully fabricated. GaInAs pin PDs and AlInAs/GaInAs high electron mobility transistors were monolithically integrated on an InP substrate. The high frequency characteristics of the receiver OEIC arrays were evaluated with on-wafer microwave probing. Two types of receiver OEIC arrays were demonstrated. One type of array exhibited high speed operation up to 5.0 Gb/s and low crosstalk characteristics less than -38 dB, while the other exhibited a high sensitivity of -21.5 dBm at 3.0 Gb/s and low crosstalk characteristics less than -40 dB
Keywords :
VLSI; crosstalk; high-speed optical techniques; integrated optoelectronics; optical interconnections; optical receivers; 3.0 Gbit/s; 5.0 Gbit/s; AlInAs-GaInAs; AlInAs/GaInAs high electron mobility transistors; GaInAs; GaInAs pin PDs; InP; InP substrate; crosstalk; four-channel receiver; high frequency characteristics; monolithic integration; on-wafer microwave probing; optoelectronic integrated circuit arrays; sensitivity; ultra-high speed optical interconnects; Crosstalk; HEMTs; Indium phosphide; Integrated optics; MODFETs; Optical arrays; Optical interconnections; Optical receivers; Optoelectronic devices; Photonic integrated circuits;
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
DOI :
10.1109/ECTC.1993.346757
