Title :
Defect-assisted field emission from ZnO nanotrees
Author :
Zhang, Z.P. ; Chen, W.Q. ; Li, Y.F. ; Jun Chen
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
The temperature dependence of field emission characteristics from ZnO nanotrees is studied. An evident thermo-enhanced field emission effect is found in field emission from ZnO nanotrees. The turn-on field decreases obviously from 15.3 MV/m to 11.9 MV/m when the temperature increases from 293 to 773K. A defect-assisted emission model is used to explain the results.
Keywords :
II-VI semiconductors; field emission; nanostructured materials; wide band gap semiconductors; zinc compounds; ZnO; ZnO nanotrees; defect-assisted field emission characteristics; temperature 293 K to 773 K; thermo-enhanced field emission effect; turn-on field; Zinc oxide; Field Emission; Poole-Frenkel; Temperature Dependence; ZnO;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894768
