Understanding defects in type-II superlattice IR photodiodes

Author

Jackson, E.M. ; Maximenko, S. ; Nolde, J.A. ; Stine, R.R. ; Canedy, C.L. ; Vurgaftman, I. ; Affouda, C.A. ; Gonzalez, M. ; Aifer, E.H. ; Meyer, J.R.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2010

fDate

7-11 Nov. 2010

Firstpage

636

Lastpage

636

Abstract

This paper studies T2SL material properties using chemical and structural probes with atomic scale resolution, and transport tools that are particularly sensitive to SRH centers, defect scattering, and surface leakage. Electron beam induced current (EBIC) mapping is being used to identify individual localized recombination centers, which are then probed compositionally with energy dispersive x-ray spectroscopy (EDS). Focused ion beam milling (FIB) is used to extract regions of high recombination that neighbor inactive regions for high resolution transmission electron microscopy, to fully reveal and compare their underlying structure.

Keywords

EBIC; X-ray chemical analysis; focused ion beam technology; infrared detectors; photodiodes; semiconductor superlattices; transmission electron microscopy; Shockley Hall Read centers; T2SL material properties; atomic scale resolution; defect scattering; electron beam induced current mapping; energy dispersive X-ray spectroscopy; focused ion beam milling; high resolution transmission electron microscopy; localized recombination centers; structural probes; surface leakage; type-II superlattice IR photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Photonics Society, 2010 23rd Annual Meeting of the

Conference_Location

Denver, CO

ISSN

-

Print_ISBN

978-1-4244-5368-9

Electronic_ISBN

-

Type

conf

DOI

10.1109/PHOTONICS.2010.5699048

Filename

5699048