Flexible crystalline InP nanomembrane LED arrays

This paper reports on flexible crystalline InP nanomembrane LED arrays with transferred InGaAsP/InP QW structure on plastic PET substrate. Two types of QW heterostructures have been designed, with total cavity thickness of one λ (wavelength). The PL peak locations are around 1527 nm. An InGaAs etch stop/sacrificial layer was used for the release of top InGaAsP QW active region. Different structures were formed based on InGaAsP QW NM transfer process. The flexible InP LED devices show excellent electrical and optical performance with low turn-on voltage, low series resistance, and the spherical optical beam profile. We also analyzed the InP LED light beam by using beam profilers. Beam profiles of flexible crystalline InP LED array without bending was investigated at room temperature whereas the driving current is 0.31 mA . Similarly, the same device with bending also was measured when the driving current is 0.36 mA.. The beam profile of device without bending is almost elliptical in shape whereas that of bending device is not elliptical.