• DocumentCode
    2306411
  • Title

    Image-containing InGaN LEDs for pattern-transfer applications

  • Author

    Massoubre, D. ; Guilhabert, B. ; Gong, Z. ; Watson, I.M. ; Gu, E. ; Dawson, M.D.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    647
  • Lastpage
    648
  • Abstract
    We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF3 plasma treatment.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical fabrication; passivation; plasma materials processing; wide band gap semiconductors; InGaN; image-containing LED; light-emitting diode fabrication; p-doping; pattern-transfer applications; plasma treatment; selective passivation; spatially patterned emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5699054
  • Filename
    5699054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2306411