Title :
Diode with resonant-tunneling emission
Author :
Goncharuk, N.M. ; Karushkin, N.F.
Author_Institution :
Res. Inst. “Orion”, Kiev, Ukraine
Abstract :
Impedance characteristics of a diode on base of resonant electron emission of gallium nitride micro-cathode with AlGaN-GaN coating and electron transit in vacuum transit layer have been theoretically investigated in the small-signal approach. Dependence of frequency spectrum of negative conductance of the diode on both negative emission conductivity and resonant emission frequency has been analyzed. The analysis has shown different structure of the spectrum (single- or multiband) depending on ratio of emission frequency to optimal transit frequency determined by emission conductivity.
Keywords :
III-V semiconductors; aluminium compounds; electron emission; gallium compounds; resonant tunnelling; semiconductor diodes; wide band gap semiconductors; AlGaN-GaN; electron transit; frequency spectrum; microcathode; negative conductance; negative emission conductivity; resonant electron emission; resonant emission frequency; resonant tunneling emission; small signal approach; vacuum transit layer; Conductivity; Gallium nitride; Lead; Resonant frequency; Resonant tunneling devices; gallium nitride; multilayer cathode; negative conductance; resonant electron emission; terahertz frequencies;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894774
