• DocumentCode
    2306429
  • Title

    Maskless fabrication of GaN-based light-emitting diodes

  • Author

    Guilhabert, B. ; Richardson, E. ; Massoubre, D. ; Gu, E. ; Watson, I.M. ; Dawson, M.D.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    649
  • Lastpage
    650
  • Abstract
    A versatile maskless process flow was developed to fabricate a GaN-based individually-addressable LED array. This new fabrication approach combines CMOS-controlled micro-LED writing and silver nanoparticle inkjet printing. An array filling factor of 99% was achieved.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; gallium compounds; ink jet printing; light emitting diodes; nanoparticles; optical arrays; optical fabrication; silver; wide band gap semiconductors; CMOS-controlled micro-LED writing; GaN; array filling factor; individually-addressable LED array; light-emitting diodes; maskless fabrication; silver nanoparticle inkjet printing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5699055
  • Filename
    5699055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2306429