A piezoresistive sensor chip for measurement of stress in electronic packaging

This paper presents the first experimental results of calibration of the 22.5° “off-axis” rosette. This rosette requires the application of only uniaxial stress for measurement of the three individual piezoresistive coefficients of silicon: π₁₁, π₁₂ and π₄₄. Of even greater potential import. This rosette yields inherently temperature compensated values of the coefficients π₄₄ and π_D=(π₁₁ -π₁₂) P-type off-axis rosettes have been characterized as a function of temperature and values for the temperature dependencies of π₄₄ and π_D are reported. The coefficients π₄₄ in p-type silicon and π _D in n-type silicon are needed for an optimized stress sensor on (100) silicon