Title :
Development of novel CNT field emitter array with gate electrode
Author :
Kato, Shigeo ; Chouhan, Vijay ; Noguchi, Takashi ; Tsujinno, Soichiro
Author_Institution :
Accel. Lab., KEK, Tsukuba, Japan
Abstract :
We have been developing CNT emitter to aim a high current density of a couple of 100A/cm2 and a high total current up to 100mA. A current density over 300 A/cm2 at 9.6MV/m and a total current of 15 mA was already achieved in a continuous DC mode. Such a high current density is attributed to so called rooting technique of CNT into the substrate. In order to increase a total emission current keeping a high current density and to avoid emittance growth, fabrication of a field emitter array with a gate was tried. The fabricated FEA was tested at an electron gun test stand in PSI and its preliminary beam characteristics were measured.
Keywords :
carbon nanotubes; current density; electrodes; electron device testing; electron guns; field emitter arrays; CNT field emitter array; CNT rooting technique; PSI; carbon nanotube; continuous DC mode; current 15 mA; current density; electron gun test; emission current; emittance growth; gate electrode; preliminary beam characteristic; substrate; Arrays; Current density; Electric fields; Lifetime estimation; Logic gates; Titanium; carbon nanotubes; field emitter array; film emitter; high current density; rooting;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894787
