• DocumentCode
    2306689
  • Title

    A novel technique for known good die processing eliminates failure mechanisms caused by traditional KGD processing

  • Author

    Delivorias, Peter ; Chrusciel, Richard ; Rispoli, Ken ; Mango, Steve

  • Author_Institution
    ETEC Inc., Peabody, MA, USA
  • fYear
    1995
  • fDate
    4-6 April 1995
  • Firstpage
    116
  • Lastpage
    123
  • Abstract
    Assembly of a Multi-Chip Module (MCM) using pre tested or Known Good Die (KGD) may result in a functional, electrically operational module, but the KGD screening technology employed may result in immediate or long term reliability problems. This paper reviews current KGD screening technologies including one employing enlarged bond pads to allow temporary wire bonding in a standard IC package. The effects of the enlarged bond pad as well as the temporary wire bond are detailed identifying potential reliability problems and concerns. A new and novel Flip Chip Interconnect (FCI) technique for temporary interconnect of a die´s bond pads to a test carrier using compliant, conductive thermoplastic bumps allows full electrical parameter testing and eliminates most of the reliability concerns. FCI technology, in addition to KGD processing, lends itself to direct attachment of die to MCMs.
  • Keywords
    BiCMOS integrated circuits; flip-chip devices; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; lead bonding; multichip modules; BiCMOS circuit die; IC package; KGD screening technology; MCM; conductive thermoplastic bumps; die bond pads; direct die attachment; electrical parameter testing; enlarged bond pads; failure mechanism elimination; flip chip interconnect; known good die processing; reliability problems; wire bonding; Assembly; Bonding; Circuit testing; Contacts; Failure analysis; Integrated circuit interconnections; Integrated circuit reliability; Manufacturing; Packaging; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-2031-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.1995.513664
  • Filename
    513664