Title :
Lateral current injection type GaInAsP/InP DFB laser with a-Si surface grating
Author :
Shindo, Takahiko ; Okumura, Tadashi ; Ito, Hitomi ; Koguchi, Takayuki ; Takahashi, Daisuke ; Atsumi, Yuki ; Kang, Joonhyun ; Osabe, Ryo ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Lateral current injection DFB laser with a-Si surface grating was demonstrated, as step to realize membrane laser. The threshold current of 7.0 mA and the differential quantum efficiency of 43% from the front facet were obtained.
Keywords :
III-V semiconductors; amorphous semiconductors; arsenic compounds; diffraction gratings; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; quantum well lasers; silicon; DFB laser; GaInAsP-InP; Si; a-Si surface grating; differential quantum efficiency; lateral current injection; membrane laser; threshold current;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5699082
