40 GHz modulation bandwidth of electroabsorption modulator with narrow-mesa ridge waveguide

Author

Tada, H. ; Miyazaki, Y. ; Takagi, K. ; Aoyagi, T. ; Nishimura, T. ; Omura, E.

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

17-22 Mar 2002

Firstpage

722

Lastpage

723

Abstract

We have developed the EA modulator with narrow-ridge waveguide to obtain the sufficient extinction ratio with the shorter modulators. Narrowing the waveguide reduces device capacitance from 0.12 pF to 0.08 pF without decrease of the extinction ratio. The modulation bandwidth of 40 GHz at -1 V bias voltage, and the extinction ratio of 15 dB at 0 V to -2.5 V operation voltage are obtained. From the viewpoint of frequency bandwidth and extinction ratio for practical use, it may be concluded that the narrow mesa waveguide structure is suitable for 40 Gb/s optical transmitter devices.

Keywords

electro-optical modulation; electroabsorption; integrated optics; optical transmitters; optical waveguides; 0 to -2.5 V; 0.12 to 0.08 pF; 1 V; 40 GHz; 40 Gbit/s; EA modulator; GHz modulation bandwidth; Gb/s optical transmitter devices; bias voltage; device capacitance; electroabsorption modulator; extinction ratio; frequency bandwidth; modulation bandwidth; narrow mesa waveguide structure; narrow-ridge waveguide; operation voltage; Bandwidth; Frequency measurement; Inverters; Optical devices; Optical feedback; Optical noise; Optical sensors; Optical signal processing; Optical wavelength conversion; Signal to noise ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036675

Filename

1036675